Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation

Nanowire structures with high-density interfaces are considered to have higher radiation damage resistance properties compared to conventional bulk structures. In the present work, molecular dynamics (MD) is conducted to investigate the irradiation effects and mechanical response changes of GaAs nan...

Descripción completa

Detalles Bibliográficos
Autores principales: Jia, Tongxuan, Wang, Zujun, Tang, Minghua, Xue, Yuanyuan, Huang, Gang, Nie, Xu, Lai, Shankun, Ma, Wuying, He, Baoping, Gou, Shilong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8876285/
https://www.ncbi.nlm.nih.gov/pubmed/35214939
http://dx.doi.org/10.3390/nano12040611

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8876285/
https://www.ncbi.nlm.nih.gov/pubmed/35214939
http://dx.doi.org/10.3390/nano12040611

Ejemplares similares