Optimization of Gate-All-Around Device to Achieve High Performance and Low Power with Low Substrate Leakage

In this study on multi-nanosheet field-effect transistor (mNS-FET)—one of the gate-all-around FETs (GAAFET) in the 3 nm technology node dimension—3D TCAD (technology computer-aided design) was used to attain optimally reduced substrate leakage from options including a punch-through-stopper (PTS) dop...

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Detalles Bibliográficos
Autores principales: Yoo, Changhyun, Chang, Jeesoo, Park, Sugil, Kim, Hyungyeong, Jeon, Jongwook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8876958/
https://www.ncbi.nlm.nih.gov/pubmed/35214921
http://dx.doi.org/10.3390/nano12040591

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8876958/
https://www.ncbi.nlm.nih.gov/pubmed/35214921
http://dx.doi.org/10.3390/nano12040591

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