Comparison of ZnO, Al(2)O(3), AlZnO, and Al(2)O(3)-Doped ZnO Sensing Membrane Applied in Electrolyte-Insulator-Semiconductor Structures

In this study, ZnO, AlZnO, Al(2)O(3), and Al(2)O(3)-doped ZnO-sensing membranes were fabricated in electrolyte–insulator–semiconductor (EIS) structures. Multiple material analyses indicate that annealing at an appropriate temperature of 500 °C could enhance crystallizations, passivate defects, and f...

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Detalles Bibliográficos
Autores principales: Kao, Chyuan-Haur, Liu, Yi-Wen, Kuo, Chih-Chen, Chan, Shih-Ming, Wang, Deng-Yi, Lin, Ya-Hsuan, Lee, Ming-Ling, Chen, Hsiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8877861/
https://www.ncbi.nlm.nih.gov/pubmed/35207089
http://dx.doi.org/10.3390/membranes12020168

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8877861/
https://www.ncbi.nlm.nih.gov/pubmed/35207089
http://dx.doi.org/10.3390/membranes12020168

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