Cargando…
Comparison of ZnO, Al(2)O(3), AlZnO, and Al(2)O(3)-Doped ZnO Sensing Membrane Applied in Electrolyte-Insulator-Semiconductor Structures
In this study, ZnO, AlZnO, Al(2)O(3), and Al(2)O(3)-doped ZnO-sensing membranes were fabricated in electrolyte–insulator–semiconductor (EIS) structures. Multiple material analyses indicate that annealing at an appropriate temperature of 500 °C could enhance crystallizations, passivate defects, and f...
| Autores principales: | , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8877861/ https://www.ncbi.nlm.nih.gov/pubmed/35207089 http://dx.doi.org/10.3390/membranes12020168 |