Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

The responsivity of AlGaN/GaN high-electron mobility transistors (HEMTs) when operating as zero-bias RF detectors in the subthreshold regime exhibits different behaviors depending on the operating temperature and gate length of the transistors. We have characterized in temperature (8–400 K) the dete...

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Detalles Bibliográficos
Autores principales: Paz-Martínez, Gaudencio, Íñiguez-de-la-Torre, Ignacio, Sánchez-Martín, Héctor, Novoa-López, José Antonio, Hoel, Virginie, Cordier, Yvon, Mateos, Javier, González, Tomás
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8878066/
https://www.ncbi.nlm.nih.gov/pubmed/35214416
http://dx.doi.org/10.3390/s22041515

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8878066/
https://www.ncbi.nlm.nih.gov/pubmed/35214416
http://dx.doi.org/10.3390/s22041515

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