Extraction of Interface-Trap Densities of the Stacked Bonding Structure in 3D Integration Using High-Frequency Capacitance-Voltage Technique

An extraction method of the interface-trap densities (D(it)) of the stacked bonding structure in 3D integration using high-frequency capacitance–voltage technique is proposed. First, an accurate high-frequency capacitance–voltage model is derived. Next, by numerically solving the charge-balance equa...

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Detalles Bibliográficos
Autores principales: Li, Man, Guo, Yufeng, Yao, Jiafei, Zhang, Jun, Liu, Fanyu, Tang, Weihua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8879072/
https://www.ncbi.nlm.nih.gov/pubmed/35208387
http://dx.doi.org/10.3390/mi13020262

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8879072/
https://www.ncbi.nlm.nih.gov/pubmed/35208387
http://dx.doi.org/10.3390/mi13020262

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