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Extraction of Interface-Trap Densities of the Stacked Bonding Structure in 3D Integration Using High-Frequency Capacitance-Voltage Technique
An extraction method of the interface-trap densities (D(it)) of the stacked bonding structure in 3D integration using high-frequency capacitance–voltage technique is proposed. First, an accurate high-frequency capacitance–voltage model is derived. Next, by numerically solving the charge-balance equa...
Autores principales: | Li, Man, Guo, Yufeng, Yao, Jiafei, Zhang, Jun, Liu, Fanyu, Tang, Weihua |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8879072/ https://www.ncbi.nlm.nih.gov/pubmed/35208387 http://dx.doi.org/10.3390/mi13020262 |
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