Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation

In this study, the breakdown behavior of a calibrated depletion mode AlGaN/GaN transistor with a nitrogen-implanted gate region was simulated and analyzed using Sentaurus TCAD simulation, with particular emphasis on the metal contact design rule for a GaN-based high-electron-mobility transistor (HEM...

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Detalles Bibliográficos
Autores principales: Sheu, Gene, Song, Yu-Lin, Mogarala, Ramyasri, Susmitha, Dupati, Issac, Kutagulla
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8879214/
https://www.ncbi.nlm.nih.gov/pubmed/35208294
http://dx.doi.org/10.3390/mi13020169

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8879214/
https://www.ncbi.nlm.nih.gov/pubmed/35208294
http://dx.doi.org/10.3390/mi13020169

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