Ge Ion Implanted Photonic Devices and Annealing for Emerging Applications

Germanium (Ge) ion implantation into silicon waveguides will induce lattice defects in the silicon, which can eventually change the crystal silicon into amorphous silicon and increase the refractive index from 3.48 to 3.96. A subsequent annealing process, either by using an external laser or integra...

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Detalles Bibliográficos
Autores principales: Yu, Xingshi, Chen, Xia, Milosevic, Milan M., Shen, Weihong, Topley, Rob, Chen, Bigeng, Yan, Xingzhao, Cao, Wei, Thomson, David J., Saito, Shinichi, Peacock, Anna C., Muskens, Otto L., Reed, Graham T.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8880043/
https://www.ncbi.nlm.nih.gov/pubmed/35208415
http://dx.doi.org/10.3390/mi13020291

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8880043/
https://www.ncbi.nlm.nih.gov/pubmed/35208415
http://dx.doi.org/10.3390/mi13020291

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