Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides

Based on the electrical conductivity model built for graphene oxide, the thermal crosstalk effects of resistive random access memory (RRAM) with graphene electrode and Pt electrode are simulated and compared. The thermal crosstalk effects of Pt-RRAM with different metal oxides of TiO(x), NiO(x), HfO...

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Detalles Bibliográficos
Autores principales: Xie, Hao, Hu, Jun, Wang, Zhili, Hu, Xiaohui, Liu, Hong, Qi, Wei, Zhang, Shuo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8880066/
https://www.ncbi.nlm.nih.gov/pubmed/35208390
http://dx.doi.org/10.3390/mi13020266

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8880066/
https://www.ncbi.nlm.nih.gov/pubmed/35208390
http://dx.doi.org/10.3390/mi13020266

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