SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss

A novel Silicon-Carbide heterojunction U-MOSFET embedded a P-type pillar buried in the drift layer (BP-TMOS) is proposed and simulated in this study. When functioning in the on state, the merged heterojunction structure will control the parasitic body diode, and the switching loss will decrease. Mor...

Descripción completa

Detalles Bibliográficos
Autores principales: Ran, Shenglong, Huang, Zhiyong, Hu, Shengdong, Yang, Han
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8880165/
https://www.ncbi.nlm.nih.gov/pubmed/35208372
http://dx.doi.org/10.3390/mi13020248

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8880165/
https://www.ncbi.nlm.nih.gov/pubmed/35208372
http://dx.doi.org/10.3390/mi13020248

Ejemplares similares