Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH(4) Plasma

Low-hydrogen-containing amorphous silicon (a-Si) was deposited at a low temperature of 80 °C using a very high frequency (VHF at 162 MHz) plasma system with multi-split electrodes. Using the 162 MHz VHF plasma system, a high deposition rate of a-Si with a relatively high deposition uniformity of 6.7...

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Detalles Bibliográficos
Autores principales: Kim, Ki Seok, Ji, You-Jin, Kim, Ki-Hyun, Kang, Ji-Eun, Ellingboe, Albert Rogers, Yeom, Geun Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8880738/
https://www.ncbi.nlm.nih.gov/pubmed/35208298
http://dx.doi.org/10.3390/mi13020173

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8880738/
https://www.ncbi.nlm.nih.gov/pubmed/35208298
http://dx.doi.org/10.3390/mi13020173

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