Impact of the structure on the thermal burnout effect induced by microwave pulses of PIN limiter diodes

Positive-intrinsic-negative (PIN) limiters are widely used to protect sensitive components from leakage power itself and adjacent high-power injection. Being the core of a PIN limiter, the PIN diode is possible to be burnt out by the external microwave pulses. Here, using a parallel computing progra...

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Detalles Bibliográficos
Autores principales: Zhao, Jingtao, Chen, Quanyou, Chen, Zhidong, Chen, Chaoyang, Zhao, Zhenguo, Liu, Zhong, Zhao, Gang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8881575/
https://www.ncbi.nlm.nih.gov/pubmed/35217765
http://dx.doi.org/10.1038/s41598-022-07326-w
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author Zhao, Jingtao
Chen, Quanyou
Chen, Zhidong
Chen, Chaoyang
Zhao, Zhenguo
Liu, Zhong
Zhao, Gang
author_facet Zhao, Jingtao
Chen, Quanyou
Chen, Zhidong
Chen, Chaoyang
Zhao, Zhenguo
Liu, Zhong
Zhao, Gang
author_sort Zhao, Jingtao
collection PubMed
description Positive-intrinsic-negative (PIN) limiters are widely used to protect sensitive components from leakage power itself and adjacent high-power injection. Being the core of a PIN limiter, the PIN diode is possible to be burnt out by the external microwave pulses. Here, using a parallel computing program for semiconductor multi-physics effects designed by ourselves, we studied the influence of the thickness of the I layer and the anode diameter of the PIN diode on the maximum temperature change curve of the PIN diode limiter. The damage threshold criterion in the numerical simulation was first studied by comparing experimental results with simulation results. Then, we determined the impact of the structure on the thermal burnout effect induced by microwave pulses of PIN limiter diodes.
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spelling pubmed-88815752022-03-01 Impact of the structure on the thermal burnout effect induced by microwave pulses of PIN limiter diodes Zhao, Jingtao Chen, Quanyou Chen, Zhidong Chen, Chaoyang Zhao, Zhenguo Liu, Zhong Zhao, Gang Sci Rep Article Positive-intrinsic-negative (PIN) limiters are widely used to protect sensitive components from leakage power itself and adjacent high-power injection. Being the core of a PIN limiter, the PIN diode is possible to be burnt out by the external microwave pulses. Here, using a parallel computing program for semiconductor multi-physics effects designed by ourselves, we studied the influence of the thickness of the I layer and the anode diameter of the PIN diode on the maximum temperature change curve of the PIN diode limiter. The damage threshold criterion in the numerical simulation was first studied by comparing experimental results with simulation results. Then, we determined the impact of the structure on the thermal burnout effect induced by microwave pulses of PIN limiter diodes. Nature Publishing Group UK 2022-02-25 /pmc/articles/PMC8881575/ /pubmed/35217765 http://dx.doi.org/10.1038/s41598-022-07326-w Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Zhao, Jingtao
Chen, Quanyou
Chen, Zhidong
Chen, Chaoyang
Zhao, Zhenguo
Liu, Zhong
Zhao, Gang
Impact of the structure on the thermal burnout effect induced by microwave pulses of PIN limiter diodes
title Impact of the structure on the thermal burnout effect induced by microwave pulses of PIN limiter diodes
title_full Impact of the structure on the thermal burnout effect induced by microwave pulses of PIN limiter diodes
title_fullStr Impact of the structure on the thermal burnout effect induced by microwave pulses of PIN limiter diodes
title_full_unstemmed Impact of the structure on the thermal burnout effect induced by microwave pulses of PIN limiter diodes
title_short Impact of the structure on the thermal burnout effect induced by microwave pulses of PIN limiter diodes
title_sort impact of the structure on the thermal burnout effect induced by microwave pulses of pin limiter diodes
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8881575/
https://www.ncbi.nlm.nih.gov/pubmed/35217765
http://dx.doi.org/10.1038/s41598-022-07326-w
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