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High-mobility hydrogenated polycrystalline In(2)O(3) (In(2)O(3):H) thin-film transistors
Oxide semiconductors have been extensively studied as active channel layers of thin-film transistors (TFTs) for electronic applications. However, the field-effect mobility (μ(FE)) of oxide TFTs is not sufficiently high to compete with that of low-temperature-processed polycrystalline-Si TFTs (50–100...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8885685/ https://www.ncbi.nlm.nih.gov/pubmed/35228522 http://dx.doi.org/10.1038/s41467-022-28480-9 |