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High-mobility hydrogenated polycrystalline In(2)O(3) (In(2)O(3):H) thin-film transistors

Oxide semiconductors have been extensively studied as active channel layers of thin-film transistors (TFTs) for electronic applications. However, the field-effect mobility (μ(FE)) of oxide TFTs is not sufficiently high to compete with that of low-temperature-processed polycrystalline-Si TFTs (50–100...

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Detalles Bibliográficos
Autores principales:	Magari, Yusaku, Kataoka, Taiki, Yeh, Wenchang, Furuta, Mamoru
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8885685/ https://www.ncbi.nlm.nih.gov/pubmed/35228522 http://dx.doi.org/10.1038/s41467-022-28480-9

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