Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model

Moore’s Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than-Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is foreseen...

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Detalles Bibliográficos
Autores principales: Chuan, Mu Wen, Riyadi, Munawar Agus, Hamzah, Afiq, Alias, Nurul Ezaila, Mohamed Sultan, Suhana, Lim, Cheng Siong, Tan, Michael Loong Peng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2022
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8893636/
https://www.ncbi.nlm.nih.gov/pubmed/35239699
http://dx.doi.org/10.1371/journal.pone.0264483

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8893636/
https://www.ncbi.nlm.nih.gov/pubmed/35239699
http://dx.doi.org/10.1371/journal.pone.0264483

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