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Neural oscillation of single silicon nanowire neuron device with no external bias voltage

In this study, we perform simulations to demonstrate neural oscillations in a single silicon nanowire neuron device comprising a gated p–n–p–n diode structure with no external bias lines. The neuron device emulates a biological neuron using interlinked positive and negative feedback loops, enabling...

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Detalles Bibliográficos
Autores principales: Woo, Sola, Kim, Sangsig
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8894366/
https://www.ncbi.nlm.nih.gov/pubmed/35241724
http://dx.doi.org/10.1038/s41598-022-07374-2