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Neural oscillation of single silicon nanowire neuron device with no external bias voltage
In this study, we perform simulations to demonstrate neural oscillations in a single silicon nanowire neuron device comprising a gated p–n–p–n diode structure with no external bias lines. The neuron device emulates a biological neuron using interlinked positive and negative feedback loops, enabling...
Autores principales: | Woo, Sola, Kim, Sangsig |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8894366/ https://www.ncbi.nlm.nih.gov/pubmed/35241724 http://dx.doi.org/10.1038/s41598-022-07374-2 |
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