Defect Inspection Techniques in SiC

With the increasing demand of silicon carbide (SiC) power devices that outperform the silicon-based devices, high cost and low yield of SiC manufacturing process are the most urgent issues yet to be solved. It has been shown that the performance of SiC devices is largely influenced by the presence o...

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Detalles Bibliográficos
Autores principales: Chen, Po-Chih, Miao, Wen-Chien, Ahmed, Tanveer, Pan, Yi-Yu, Lin, Chun-Liang, Chen, Shih-Chen, Kuo, Hao-Chung, Tsui, Bing-Yue, Lien, Der-Hsien
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8897546/
https://www.ncbi.nlm.nih.gov/pubmed/35244784
http://dx.doi.org/10.1186/s11671-022-03672-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8897546/
https://www.ncbi.nlm.nih.gov/pubmed/35244784
http://dx.doi.org/10.1186/s11671-022-03672-w

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