Quantified density of performance-degrading near-interface traps in SiC MOSFETs

Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mobility and causing threshold-voltage drift. In this work, we ha...

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Detalles Bibliográficos
Autores principales: Chaturvedi, Mayank, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Pande, Peyush, Jadli, Utkarsh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8904523/
https://www.ncbi.nlm.nih.gov/pubmed/35260739
http://dx.doi.org/10.1038/s41598-022-08014-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8904523/
https://www.ncbi.nlm.nih.gov/pubmed/35260739
http://dx.doi.org/10.1038/s41598-022-08014-5

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