Quantified density of performance-degrading near-interface traps in SiC MOSFETs

Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mobility and causing threshold-voltage drift. In this work, we ha...

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Autores principales: Chaturvedi, Mayank, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Pande, Peyush, Jadli, Utkarsh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8904523/
https://www.ncbi.nlm.nih.gov/pubmed/35260739
http://dx.doi.org/10.1038/s41598-022-08014-5
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author Chaturvedi, Mayank
Dimitrijev, Sima
Haasmann, Daniel
Moghadam, Hamid Amini
Pande, Peyush
Jadli, Utkarsh
author_facet Chaturvedi, Mayank
Dimitrijev, Sima
Haasmann, Daniel
Moghadam, Hamid Amini
Pande, Peyush
Jadli, Utkarsh
author_sort Chaturvedi, Mayank
collection PubMed
description Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mobility and causing threshold-voltage drift. In this work, we have applied a newly developed integrated-charge technique to measure the density of NITs that are active in the above-threshold region of commercial SiC MOSFETs. The results demonstrate that NITs trap about 10% of the channel electrons for longer than 500 ns.
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spelling pubmed-89045232022-03-09 Quantified density of performance-degrading near-interface traps in SiC MOSFETs Chaturvedi, Mayank Dimitrijev, Sima Haasmann, Daniel Moghadam, Hamid Amini Pande, Peyush Jadli, Utkarsh Sci Rep Article Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mobility and causing threshold-voltage drift. In this work, we have applied a newly developed integrated-charge technique to measure the density of NITs that are active in the above-threshold region of commercial SiC MOSFETs. The results demonstrate that NITs trap about 10% of the channel electrons for longer than 500 ns. Nature Publishing Group UK 2022-03-08 /pmc/articles/PMC8904523/ /pubmed/35260739 http://dx.doi.org/10.1038/s41598-022-08014-5 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Chaturvedi, Mayank
Dimitrijev, Sima
Haasmann, Daniel
Moghadam, Hamid Amini
Pande, Peyush
Jadli, Utkarsh
Quantified density of performance-degrading near-interface traps in SiC MOSFETs
title Quantified density of performance-degrading near-interface traps in SiC MOSFETs
title_full Quantified density of performance-degrading near-interface traps in SiC MOSFETs
title_fullStr Quantified density of performance-degrading near-interface traps in SiC MOSFETs
title_full_unstemmed Quantified density of performance-degrading near-interface traps in SiC MOSFETs
title_short Quantified density of performance-degrading near-interface traps in SiC MOSFETs
title_sort quantified density of performance-degrading near-interface traps in sic mosfets
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8904523/
https://www.ncbi.nlm.nih.gov/pubmed/35260739
http://dx.doi.org/10.1038/s41598-022-08014-5
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