CBRAM technology: transition from a memory cell to a programmable and non-volatile impedance for new radiofrequency applications

Electrical resistance control programming of conductive bridging random access memory (CBRAM) radio frequency (RF) switches could benefit the development of electronically controlled non-volatile RF attenuators and other reconfigurable devices. The object of this study is to adapt a conventional CBR...

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Detalles Bibliográficos
Autores principales: López-Soriano, Sergio, Methapettyparambu Purushothama, Jayakrishnan, Vena, Arnaud, Perret, Etienne
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8904552/
https://www.ncbi.nlm.nih.gov/pubmed/35260769
http://dx.doi.org/10.1038/s41598-022-08127-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8904552/
https://www.ncbi.nlm.nih.gov/pubmed/35260769
http://dx.doi.org/10.1038/s41598-022-08127-x

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