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CBRAM technology: transition from a memory cell to a programmable and non-volatile impedance for new radiofrequency applications
Electrical resistance control programming of conductive bridging random access memory (CBRAM) radio frequency (RF) switches could benefit the development of electronically controlled non-volatile RF attenuators and other reconfigurable devices. The object of this study is to adapt a conventional CBR...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8904552/ https://www.ncbi.nlm.nih.gov/pubmed/35260769 http://dx.doi.org/10.1038/s41598-022-08127-x |