Evidence of sp(2)-like Hybridization of Silicon Valence Orbitals in Thin and Thick Si Grown on α-Phase Si(111)√3 × √3R30°-Bi

One-monolayer (ML) (thin) and 5-ML (thick) Si films were grown on the α-phase Si(111)√3 × √3R30°-Bi at a low substrate temperature of 200 °C. Si films have been studied in situ by reflection electron energy loss spectroscopy (REELS) and Auger electron spectroscopy, as a function of the electron beam...

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Detalles Bibliográficos
Autores principales: Garagnani, David, De Padova, Paola, Ottaviani, Carlo, Quaresima, Claudio, Generosi, Amanda, Paci, Barbara, Olivieri, Bruno, Jałochowski, Mieczysław, Krawiec, Mariusz
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8911118/
https://www.ncbi.nlm.nih.gov/pubmed/35268964
http://dx.doi.org/10.3390/ma15051730

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8911118/
https://www.ncbi.nlm.nih.gov/pubmed/35268964
http://dx.doi.org/10.3390/ma15051730

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