Atomic Layer Deposition of Ultrathin La(2)O(3)/Al(2)O(3) Nanolaminates on MoS(2) with Ultraviolet Ozone Treatment

Due to the chemically inert surface of MoS(2), uniform deposition of ultrathin high-κ dielectric using atomic layer deposition (ALD) is difficult. However, this is crucial for the fabrication of field-effect transistors (FETs). In this work, the atomic layer deposition growth of sub-5 nm La(2)O(3)/A...

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Detalles Bibliográficos
Autores principales: Fan, Jibin, Shi, Yimeng, Liu, Hongxia, Wang, Shulong, Luan, Lijun, Duan, Li, Zhang, Yan, Wei, Xing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8911297/
https://www.ncbi.nlm.nih.gov/pubmed/35269024
http://dx.doi.org/10.3390/ma15051794

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8911297/
https://www.ncbi.nlm.nih.gov/pubmed/35269024
http://dx.doi.org/10.3390/ma15051794

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