Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

Nitrogen incorporation changes the lattice spacing of SiC and can therefore lead to stress during physical vapor transport (PVT). The impact of the nitrogen-doping concentration during the initial phase of PVT growth of 4H-SiC was investigated using molten potassium hydroxide (KOH) etching, and the...

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Detalles Bibliográficos
Autores principales: Steiner, Johannes, Wellmann, Peter J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8911631/
https://www.ncbi.nlm.nih.gov/pubmed/35269127
http://dx.doi.org/10.3390/ma15051897

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8911631/
https://www.ncbi.nlm.nih.gov/pubmed/35269127
http://dx.doi.org/10.3390/ma15051897

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