5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si(1−x)Ge(x) Alloys

Minority carrier traps play an important role in the performance and radiation hardness of the radiation detectors operating in a harsh environment of particle accelerators, such as the up-graded sensors of the high-luminosity hadron collider (HL-HC) at CERN. It is anticipated that the sensors of th...

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Detalles Bibliográficos
Autores principales: Pavlov, Jevgenij, Ceponis, Tomas, Pukas, Kornelijus, Makarenko, Leonid, Gaubas, Eugenijus
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8911796/
https://www.ncbi.nlm.nih.gov/pubmed/35269092
http://dx.doi.org/10.3390/ma15051861

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8911796/
https://www.ncbi.nlm.nih.gov/pubmed/35269092
http://dx.doi.org/10.3390/ma15051861

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