Low-Temperature Cu/SiO(2) Hybrid Bonding with Low Contact Resistance Using (111)-Oriented Cu Surfaces

We adopted (111)-oriented Cu with high surface diffusivity to achieve low-temperature and low-pressure Cu/SiO(2) hybrid bonding. Electroplating was employed to fabricate arrays of Cu vias with 78% (111) surface grains. The bonding temperature can be lowered to 200 °C, and the pressure is as low as 1...

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Detalles Bibliográficos
Autores principales: Ong, Jia-Juen, Chiu, Wei-Lan, Lee, Ou-Hsiang, Chiang, Chia-Wen, Chang, Hsiang-Hung, Wang, Chin-Hung, Shie, Kai-Cheng, Yang, Shih-Chi, Tran, Dinh-Phuc, Tu, King-Ning, Chen, Chih
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8911830/
https://www.ncbi.nlm.nih.gov/pubmed/35269118
http://dx.doi.org/10.3390/ma15051888

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8911830/
https://www.ncbi.nlm.nih.gov/pubmed/35269118
http://dx.doi.org/10.3390/ma15051888

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