Oxygen and Nitrogen Transfer in Furnaces in Crystal Growth of Silicon by Czochralski and Directional Solidification Processes

Impurity concentrations of oxygen, carbon, nitrogen, iron, and other heavy metals should be well controlled in silicon crystals to maintain the crystal quality for application in electronic and solar cell devices. Contamination by impurities occurs during the melting of raw materials and during the...

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Detalles Bibliográficos
Autores principales: Kakimoto, Koichi, Liu, Xin, Nakano, Satoshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8911910/
https://www.ncbi.nlm.nih.gov/pubmed/35269074
http://dx.doi.org/10.3390/ma15051843

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8911910/
https://www.ncbi.nlm.nih.gov/pubmed/35269074
http://dx.doi.org/10.3390/ma15051843

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