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Oxygen and Nitrogen Transfer in Furnaces in Crystal Growth of Silicon by Czochralski and Directional Solidification Processes
Impurity concentrations of oxygen, carbon, nitrogen, iron, and other heavy metals should be well controlled in silicon crystals to maintain the crystal quality for application in electronic and solar cell devices. Contamination by impurities occurs during the melting of raw materials and during the...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8911910/ https://www.ncbi.nlm.nih.gov/pubmed/35269074 http://dx.doi.org/10.3390/ma15051843 |