Enhanced Switching Reliability of Sol–Gel-Processed Y(2)O(3) RRAM Devices Based on Y(2)O(3) Surface Roughness-Induced Local Electric Field

Sol–gel-processed Y(2)O(3) films were used as active channel layers for resistive random access memory (RRAM) devices. The fabricated ITO/Y(2)O(3)/Ag RRAM devices exhibited the properties of conventional bipolar memory devices. A triethylamine stabilizer with a high vapor pressure and low surface te...

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Detalles Bibliográficos
Autores principales: Kim, Do-Won, Kim, Hyeon-Joong, Lee, Won-Yong, Kim, Kyoungdu, Lee, Sin-Hyung, Bae, Jin-Hyuk, Kang, In-Man, Kim, Kwangeun, Jang, Jaewon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8911950/
https://www.ncbi.nlm.nih.gov/pubmed/35269170
http://dx.doi.org/10.3390/ma15051943

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8911950/
https://www.ncbi.nlm.nih.gov/pubmed/35269170
http://dx.doi.org/10.3390/ma15051943

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