Enhanced Switching Reliability of Sol–Gel-Processed Y(2)O(3) RRAM Devices Based on Y(2)O(3) Surface Roughness-Induced Local Electric Field

Sol–gel-processed Y(2)O(3) films were used as active channel layers for resistive random access memory (RRAM) devices. The fabricated ITO/Y(2)O(3)/Ag RRAM devices exhibited the properties of conventional bipolar memory devices. A triethylamine stabilizer with a high vapor pressure and low surface tension was added to realize the local electric field area. During drying and high-temperature post-annealing processes, the large convective flow enhanced the surface elevation, and the increased –OH groups accelerated the hydrolysis reaction and aggregation. These phenomena afforded Y(2)O(3) films with an uneven surface morphology and an increased surface roughness. The increased roughness of the Y(2)O(3) films attributable to the triethylamine stabilizer enhanced the local electrical field, improved device reliability, and achieved successful repetition of the switching properties over an extended period.