Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance

In contrast to conventional forming gas annealing (FGA), high-pressure deuterium annealing (HPD) shows a superior passivation of dangling bonds on the Si/SiO(2) interface. However, research detailing the process optimization for HPD has been modest. In this context, this paper demonstrates the itera...

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Detalles Bibliográficos
Autores principales: Wang, Dong-Hyun, Ku, Ja-Yun, Jung, Dae-Han, Lee, Khwang-Sun, Shin, Woo Cheol, Yang, Byung-Do, Park, Jun-Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8912009/
https://www.ncbi.nlm.nih.gov/pubmed/35269192
http://dx.doi.org/10.3390/ma15051960

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8912009/
https://www.ncbi.nlm.nih.gov/pubmed/35269192
http://dx.doi.org/10.3390/ma15051960

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