Potential of TiN/GaN Heterostructures for Hot Carrier Generation and Collection

Herein, we find that TiN sputter-deposited on GaN displayed the desired optical properties for plasmonic applications. While this is a positive result indicating the possible use of p- or n-type GaN as a collector of plasmonically generated hot carriers, the interfacial properties differed considera...

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Detalles Bibliográficos
Autores principales: Simpkins, Blake S., Maximenko, Sergey I., Baturina, Olga
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8912733/
https://www.ncbi.nlm.nih.gov/pubmed/35269325
http://dx.doi.org/10.3390/nano12050837

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8912733/
https://www.ncbi.nlm.nih.gov/pubmed/35269325
http://dx.doi.org/10.3390/nano12050837

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