Improvement of Schottky Contacts of Gallium Oxide (Ga(2)O(3)) Nanowires for UV Applications

Interest in the synthesis and fabrication of gallium oxide (Ga(2)O(3)) nanostructures as wide bandgap semiconductor-based ultraviolet (UV) photodetectors has recently increased due to their importance in cases of deep-UV photodetectors operating in high power/temperature conditions. Due to their uni...

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Detalles Bibliográficos
Autores principales: Alhalaili, Badriyah, Al-Duweesh, Ahmad, Popescu, Ileana Nicoleta, Vidu, Ruxandra, Vladareanu, Luige, Islam, M. Saif
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8914786/
https://www.ncbi.nlm.nih.gov/pubmed/35271195
http://dx.doi.org/10.3390/s22052048

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8914786/
https://www.ncbi.nlm.nih.gov/pubmed/35271195
http://dx.doi.org/10.3390/s22052048

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