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Improvement of Schottky Contacts of Gallium Oxide (Ga(2)O(3)) Nanowires for UV Applications
Interest in the synthesis and fabrication of gallium oxide (Ga(2)O(3)) nanostructures as wide bandgap semiconductor-based ultraviolet (UV) photodetectors has recently increased due to their importance in cases of deep-UV photodetectors operating in high power/temperature conditions. Due to their uni...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8914786/ https://www.ncbi.nlm.nih.gov/pubmed/35271195 http://dx.doi.org/10.3390/s22052048 |