Nanometer-Scale Lateral p–n Junctions in Graphene/α-RuCl(3) Heterostructures

[Image: see text] The ability to create nanometer-scale lateral p–n junctions is essential for the next generation of two-dimensional (2D) devices. Using the charge-transfer heterostructure graphene/α-RuCl(3), we realize nanoscale lateral p–n junctions in the vicinity of graphene nanobubbles. Our mu...

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Detalles Bibliográficos
Autores principales: Rizzo, Daniel J., Shabani, Sara, Jessen, Bjarke S., Zhang, Jin, McLeod, Alexander S., Rubio-Verdú, Carmen, Ruta, Francesco L., Cothrine, Matthew, Yan, Jiaqiang, Mandrus, David G., Nagler, Stephen E., Rubio, Angel, Hone, James C., Dean, Cory R., Pasupathy, Abhay N., Basov, D. N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8915251/
https://www.ncbi.nlm.nih.gov/pubmed/35226804
http://dx.doi.org/10.1021/acs.nanolett.1c04579

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8915251/
https://www.ncbi.nlm.nih.gov/pubmed/35226804
http://dx.doi.org/10.1021/acs.nanolett.1c04579

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