Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Phase‐change material (PCM) devices are one of the most mature nonvolatile memories. However, their high power consumption remains a bottleneck problem limiting the data storage density. One may drastically reduce the programming power by patterning the PCM volume down to nanometer scale, but that r...

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Detalles Bibliográficos
Autores principales: Yang, Zhe, Li, Bowen, Wang, Jiang‐Jing, Wang, Xu‐Dong, Xu, Meng, Tong, Hao, Cheng, Xiaomin, Lu, Lu, Jia, Chunlin, Xu, Ming, Miao, Xiangshui, Zhang, Wei, Ma, En
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8922100/
https://www.ncbi.nlm.nih.gov/pubmed/35032111
http://dx.doi.org/10.1002/advs.202103478

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8922100/
https://www.ncbi.nlm.nih.gov/pubmed/35032111
http://dx.doi.org/10.1002/advs.202103478

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