Ultra‐Steep‐Slope High‐Gain MoS(2) Transistors with Atomic Threshold‐Switching Gate

The fundamental Boltzmann limitation dictates the ultimate limit of subthreshold swing (SS) to be 60 mV dec(−1), which prevents the continued scaling of supply voltage. With atomically thin body, 2D semiconductors provide new possibilities for advanced low‐power electronics. Herein, ultra‐steep‐slop...

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Detalles Bibliográficos
Autores principales: Lin, Jun, Chen, Xiaozhang, Duan, Xinpei, Yu, Zhiming, Niu, Wencheng, Zhang, Mingliang, Liu, Chang, Li, Guoli, Liu, Yuan, Liu, Xingqiang, Zhou, Peng, Liao, Lei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8922111/
https://www.ncbi.nlm.nih.gov/pubmed/35038247
http://dx.doi.org/10.1002/advs.202104439

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8922111/
https://www.ncbi.nlm.nih.gov/pubmed/35038247
http://dx.doi.org/10.1002/advs.202104439

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