High-k perovskite gate oxide for modulation beyond 10(14) cm(−2)

Scaling down of semiconductor devices requires high-k dielectric materials to continue lowering the operating voltage of field-effect transistors (FETs) and storing sufficient charge on a smaller area. Here, we investigate the dielectric properties of epitaxial BaHf(0.6)Ti(0.4)O(3) (BHTO), an alloy...

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Detalles Bibliográficos
Autores principales: Song, Dowon, Jeong, Myoungho, Kim, Juhan, Kim, Bongju, Kim, Jae Ha, Kim, Jae Hoon, Lee, Kiyoung, Kim, Yongsung, Char, Kookrin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2022
Materias:
Physical and Materials Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8932668/
https://www.ncbi.nlm.nih.gov/pubmed/35302844
http://dx.doi.org/10.1126/sciadv.abm3962

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8932668/
https://www.ncbi.nlm.nih.gov/pubmed/35302844
http://dx.doi.org/10.1126/sciadv.abm3962

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