High-k perovskite gate oxide for modulation beyond 10(14) cm(−2)

Scaling down of semiconductor devices requires high-k dielectric materials to continue lowering the operating voltage of field-effect transistors (FETs) and storing sufficient charge on a smaller area. Here, we investigate the dielectric properties of epitaxial BaHf(0.6)Ti(0.4)O(3) (BHTO), an alloy of perovskite oxide barium hafnate (BaHfO(3)) and barium titanate (BaTiO(3)). We found the dielectric constant, the breakdown field, and the leakage current to be 150, 5.0 megavolts per centimeter (MV cm(−1)), and 10(−4) amperes per square centimeter at 2 MV cm(−1), respectively. The results suggest that two-dimensional (2D) carrier density of more than n(2D) = 10(14) per square centimeter (cm(−2)) could be modulated by the BHTO gate oxide. We demonstrate an n-type accumulation mode FET and direct suppression of more than n(2D) = 10(14) cm(−2) via an n-type depletion-mode FET. We attribute the large dielectric constant, high breakdown field, and low leakage current of BHTO to the nanometer scale stoichiometric modulation of hafnium and titanium.