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High-k perovskite gate oxide for modulation beyond 10(14) cm(−2)

Scaling down of semiconductor devices requires high-k dielectric materials to continue lowering the operating voltage of field-effect transistors (FETs) and storing sufficient charge on a smaller area. Here, we investigate the dielectric properties of epitaxial BaHf(0.6)Ti(0.4)O(3) (BHTO), an alloy...

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Detalles Bibliográficos
Autores principales:	Song, Dowon, Jeong, Myoungho, Kim, Juhan, Kim, Bongju, Kim, Jae Ha, Kim, Jae Hoon, Lee, Kiyoung, Kim, Yongsung, Char, Kookrin
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Association for the Advancement of Science 2022
Materias:	Physical and Materials Sciences
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8932668/ https://www.ncbi.nlm.nih.gov/pubmed/35302844 http://dx.doi.org/10.1126/sciadv.abm3962

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