Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Solving the doping asymmetry issue in wide-gap semiconductors is a key difficulty and long-standing challenge for device applications. Here, a desorption-tailoring strategy is proposed to juggle the carrier concentration and transport. Specific to the p-doping issue in Al-rich AlGaN, self-assembled...

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Detalles Bibliográficos
Autores principales: Wang, Jiaming, Wang, Mingxing, Xu, Fujun, Liu, Baiyin, Lang, Jing, Zhang, Na, Kang, Xiangning, Qin, Zhixin, Yang, Xuelin, Wang, Xinqiang, Ge, Weikun, Shen, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8943166/
https://www.ncbi.nlm.nih.gov/pubmed/35322013
http://dx.doi.org/10.1038/s41377-022-00753-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8943166/
https://www.ncbi.nlm.nih.gov/pubmed/35322013
http://dx.doi.org/10.1038/s41377-022-00753-4

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