Improving the GaN Growth Rate by Optimizing the Nutrient Basket Geometry in an Ammonothermal System Based on Numerical Simulation

[Image: see text] The low growth rate of bulk gallium nitride (GaN) when using the ammonothermal method is improved herein by optimizing the nutrient geometry. A numerical model considering the dissolution and crystallization process is developed. Heater powers are employed as thermal boundary condi...

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Detalles Bibliográficos
Autores principales: Han, Pengfei, Gao, Bing, Song, Botao, Yu, Yue, Tang, Xia, Liu, Sheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8945142/
https://www.ncbi.nlm.nih.gov/pubmed/35350345
http://dx.doi.org/10.1021/acsomega.1c06154

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8945142/
https://www.ncbi.nlm.nih.gov/pubmed/35350345
http://dx.doi.org/10.1021/acsomega.1c06154

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