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Improving the GaN Growth Rate by Optimizing the Nutrient Basket Geometry in an Ammonothermal System Based on Numerical Simulation
[Image: see text] The low growth rate of bulk gallium nitride (GaN) when using the ammonothermal method is improved herein by optimizing the nutrient geometry. A numerical model considering the dissolution and crystallization process is developed. Heater powers are employed as thermal boundary condi...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8945142/ https://www.ncbi.nlm.nih.gov/pubmed/35350345 http://dx.doi.org/10.1021/acsomega.1c06154 |