Influence of growth temperature on dielectric strength of Al(2)O(3) thin films prepared via atomic layer deposition at low temperature

Thin films grown via atomic layer deposition (ALD) suffer from insufficient growth rate and unreliability for temperature-sensitive electronic substrates. This study aimed to examine the growth characteristics and dielectric strength of ALD Al(2)O(3) films grown at low temperatures (≤ 150 °C) for po...

Descripción completa

Detalles Bibliográficos
Autores principales: Kim, Suyeon, Lee, Seung-Hun, Jo, In Ho, Seo, Jongsu, Yoo, Yeong-Eun, Kim, Jeong Hwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8948174/
https://www.ncbi.nlm.nih.gov/pubmed/35332219
http://dx.doi.org/10.1038/s41598-022-09054-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8948174/
https://www.ncbi.nlm.nih.gov/pubmed/35332219
http://dx.doi.org/10.1038/s41598-022-09054-7

Ejemplares similares