Influence of growth temperature on dielectric strength of Al(2)O(3) thin films prepared via atomic layer deposition at low temperature

Thin films grown via atomic layer deposition (ALD) suffer from insufficient growth rate and unreliability for temperature-sensitive electronic substrates. This study aimed to examine the growth characteristics and dielectric strength of ALD Al(2)O(3) films grown at low temperatures (≤ 150 °C) for potential application in flexible electronic devices. The growth rate of the Al(2)O(3) films increased from 0.9 to 1.1 Å/cycle with increasing temperature and saturated at growth temperatures ≥ 150 °C, which is the critical temperature at which a complete oxidation reaction occurred. The dielectric strength was also improved with increasing growth temperature, and the films grown at 150 °C showed a high breakdown field strength (~ 8.3 MV/cm), attributable to the decrease in the carbon impurities and oxygen defects, as confirmed by X-ray photoelectron spectroscopy. Even at low growth temperatures (≤ 150 °C), ALD Al(2)O(3) films showed an overall amorphous structure and extremely smooth surfaces regardless of the growth temperature.