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Influence of growth temperature on dielectric strength of Al(2)O(3) thin films prepared via atomic layer deposition at low temperature
Thin films grown via atomic layer deposition (ALD) suffer from insufficient growth rate and unreliability for temperature-sensitive electronic substrates. This study aimed to examine the growth characteristics and dielectric strength of ALD Al(2)O(3) films grown at low temperatures (≤ 150 °C) for po...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8948174/ https://www.ncbi.nlm.nih.gov/pubmed/35332219 http://dx.doi.org/10.1038/s41598-022-09054-7 |