Highly Stretchable High‐Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates

Quasi‐1D silicon nanowires (SiNWs) field effect transistors (FETs) integrated upon large‐area elastomers are advantageous candidates for developing various high‐performance stretchable electronics and displays. In this work, it is demonstrated that an orderly array of slim SiNW channels, with a diam...

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Detalles Bibliográficos
Autores principales: Song, Xiaopan, Zhang, Ting, Wu, Lei, Hu, Ruijin, Qian, Wentao, Liu, Zongguang, Wang, Junzhuan, Shi, Yi, Xu, Jun, Chen, Kunji, Yu, Linwei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8948590/
https://www.ncbi.nlm.nih.gov/pubmed/35092351
http://dx.doi.org/10.1002/advs.202105623

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8948590/
https://www.ncbi.nlm.nih.gov/pubmed/35092351
http://dx.doi.org/10.1002/advs.202105623

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