Highly Stretchable High‐Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates

Quasi‐1D silicon nanowires (SiNWs) field effect transistors (FETs) integrated upon large‐area elastomers are advantageous candidates for developing various high‐performance stretchable electronics and displays. In this work, it is demonstrated that an orderly array of slim SiNW channels, with a diameter of <80 nm, can be precisely grown into desired locations via an in‐plane solid‐liquid‐solid (IPSLS) mechanism, and reliably batch‐transferred onto large area polydimethylsiloxane (PDMS) elastomers. Within an optimized discrete FETs‐on‐islands architecture, the SiNW‐FETs can sustain large stretching strains up to 50% and repetitive testing for more than 1000 cycles (under 20% strain), while achieving a high hole carrier mobility, I (on)/I (off) current ratio and subthreshold swing (SS) of ≈70 cm(2) V(−1) s(−1), >10(5) and 134 ‐ 277 mV decade(−1), respectively, working stably in an ambient environment over 270 days without any passivation protection. These results indicate a promising new routine to batch‐manufacture and integrate high‐performance, scalable and stretchable SiNW‐FET electronics that can work stably in harsh and large‐strain environments, which is a key capability for future practical flexible display and wearable electronic applications.